Figure 1. Structural diagram of BBCube 3D (IMAGE) Tokyo Institute of Technology Caption The proposed technology uses a stacked design where processing units (xPU) sit atop multiple interconnected memory layers (DRAM). By replacing wires with through-silicon vias (TSVs), the lengths of the connections can be shortened, leading to better overall electrical performance. Credit Profesor Takayuki Ohba Usage Restrictions Credit must be given to the creator. Only noncommercial uses of the work are permitted. No derivatives or adaptations of the work are permitted. License CC BY-NC-ND Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.