Photon-trapping micro- and nano-sized holes in silicon (Si) make normally incident light bend by almost 90°, making it propagate laterally along the plane and leading consequently to increased light absorption in the NIR band. (IMAGE)

SPIE--International Society for Optics and Photonics

Photon-trapping micro- and nano-sized holes in silicon (Si) make normally incident light bend by almost 90°, making it propagate laterally along the plane and leading consequently to increased light absorption in the NIR band.

Caption

Photon-trapping micro- and nano-sized holes in silicon (Si) make normally incident light bend by almost 90°, making it propagate laterally along the plane and leading consequently to increased light absorption in the NIR band.

Credit

Qarony, Mayet, et al., doi 10.1117/1.APN.2.5.056001.

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